El futuro del almacenamiento de información estudio de la tecnología de memorias resistivas basado en el modelo de contactos de punto cuántico

Recently, the model based on the quantum point contacts (QPC) achieved important results for describing the conduction mechanism of HfO2-based resistive random access memories (RRAM). This work makes a study of two important aspects related to the physics of these memories: a possible dependence of...

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Bibliographic Details
Main Author: Moreno Lanas, Jorge Esteban
Other Authors: Trojman, Lionel (dir)
Format: Tesis de Pregrado
Published: Quito, 2013 2014
Subjects:
Online Access:http://repositorio.usfq.edu.ec/handle/23000/2797
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